Characterization of Carbon Nanotube Field-Effect Transistor (CNTFET)

Analysis of CNTFET performance and parameter variation using MATLAB and NEGF simulations.

This project explored the

  • Electrical characterization and modeling of carbon nanotube field-effect transistors (CNTFETs), focusing on how device parameters and doping profiles influence transport behavior.
  • Simulation: MATLAB and Simulink, along with nonequilibrium Green’s function (NEGF)-based frameworks.

Simulation and Modeling

Key Findings

  • Developed and validated an empirical CNTFET model for performance analysis for different logical gates.
  • Investigated doping profile effects on device output and transconductance.
  • Showed that non-uniform doping significantly influences channel control and subthreshold swing in nanoscale CNTFETs.

Tools and Techniques

MATLAB Simulink

  • Simulation: MATLAB, Simulink
  • Theoretical Framework: Nonequilibrium Green’s Function (NEGF)
  • Device Parameters: Channel diameter, gate oxide thickness, and doping concentration etc.
  • Outputs: I–V characteristics, transconductance, subthreshold slope

  1. Effect of doping profile variation on nanoscale cylindrical gate carbon nanotube field-effect transistor: a computational study using nonequilibrium Green’s function formalism
    M. Mahdi, M. A. Hossain, S. Hussain, M. Hasan, H. U. Zaman, J. K. Saha
    Semiconductor Science and Technology, 36(1), 015012 (2020)

  2. Performance analysis of an empirical model of carbon nanotube field-effect transistor
    M. Mahdi, M. A. Hossain, J. K. Saha
    2018 International Conference on Innovation in Engineering and Technology (ICIET), 2018)

This study established a comprehensive computational framework for nanoscale transistor modeling and contributed to the understanding of ballistic transport phenomena in carbon nanotube-based devices.